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Full-Text Articles in Physics
Sequential Infiltration Synthesis Of Silicon Dioxide In Polymers With Ester Groups─Insight From In Situ Infrared Spectroscopy, Mahua Biswas, Vepa Rozyyev, Anil U. Mane, Amelia Korveziroska, Uttam Manna, Jeffrey W. Elam
Sequential Infiltration Synthesis Of Silicon Dioxide In Polymers With Ester Groups─Insight From In Situ Infrared Spectroscopy, Mahua Biswas, Vepa Rozyyev, Anil U. Mane, Amelia Korveziroska, Uttam Manna, Jeffrey W. Elam
Faculty publications – Physics
New strategies to synthesize nanometer-scale silicon dioxide (SiO2) patterns have drawn much attention in applications such as microelectronic and optoelectronic devices, membranes, and sensors, as we are approaching device dimensions shrinking below 10 nm. In this regard, sequential infiltration synthesis (SIS), a two-step gas-phase molecular assembly process that enables localized inorganic material growth in the targeted reactive domains of polymers, is an attractive process. In this work, we performed in situ Fourier transform infrared spectroscopy (FTIR) measurements during SiO2 SIS to investigate the reaction mechanism of trimethylaluminum (TMA) and tri(tert-pentoxy) silanol (TPS) precursors with polymers having ester functional groups (poly(methyl …
Quantum Interference Enhancement Of The Spin-Dependent Thermoelectric Response, Runa X. Bennett, Joshua R. Hendrickson, Justin P. Bergfield
Quantum Interference Enhancement Of The Spin-Dependent Thermoelectric Response, Runa X. Bennett, Joshua R. Hendrickson, Justin P. Bergfield
Faculty publications – Physics
We investigate the influence of quantum interference (QI) and broken spin-symmetry on the thermoelectric response of node-possessing junctions, finding a dramatic enhancement of the spin-thermopower (Ss), figure-of-merit (ZsT), and maximum thermodynamic efficiency (ηsmax) caused by destructive QI. Using many-body and single-particle methods, we calculate the response of 1,3-benzenedithiol and cross-conjugated molecule-based junctions subject to an applied magnetic field, finding nearly universal behavior over a range of junction parameters with Ss, ZsT, and reaching peak values of 2𝜋/ √3(𝑘/𝑒)2𝜋/3(𝑘/𝑒), 1.51, and 28% of Carnot efficiency, respectively. We also find that the …