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Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Xia Hong Publications
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50–110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at …
Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu
Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu
Xia Hong Publications
We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20 000 cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300 K, surface phonon modes of the HfO2 film centered at 54 meV limit the mobility to approximately 20 000 cm2/Vs.