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Study Of Radiation Effects In Gan-Based Devices, Han Gao
Study Of Radiation Effects In Gan-Based Devices, Han Gao
Electrical Engineering Theses and Dissertations
Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore …
Study Of Missing Mass Background In The Clas12 Detector, Jessie Hess, Gerard P. Gilfoyle, Lamya Baashen
Study Of Missing Mass Background In The Clas12 Detector, Jessie Hess, Gerard P. Gilfoyle, Lamya Baashen
Honors Theses
At Jefferson Lab we use the CLAS12 detector to measure the neutron magnetic form factor. An accurate measurement of the CLAS12 neutron detection efficiency (NDE) is required. We use the nuclear reaction ���� → ��′��+�� as a source of tagged neutrons and obtain the NDE from the ratio of expected neutrons to detected ones. We assume the final state consists of ��′��+�� only, use the ��′��+ information to predict the neutron's position(expected) and then search for that neutron(detected). We select neutrons with the missing mass (MM) technique. We use simulation to validate our methods. We simulated events with the Monte-Carlo …