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Electrically Tunable Transport In The Antiferromagnetic Mott Insulator Sr2Iro4, C. Wang, H. Seinige, Gang Cao, J.-S. Zhou, J. B. Goodenough, M. Tsoi

Physics and Astronomy Faculty Publications

Electronic transport properties of the antiferromagnetic Mott insulator Sr₂IrO₄ have been investigated under extremely high electric biases. Using nanoscale contacts, we apply electric fields up to a few MV/m to a single crystal of Sr₂IrO₄ and observe a continuous reduction in the material's resistivity with increasing bias, characterized by a reduction in the transport activation energy by as much as 16%. Temperature-dependent resistivity measurements provide a means to unambiguously retrieve the bias dependence of the activation energy from the Arrhenius plots at different biases. We further demonstrate the feasibility of reversible resistive switching induced …