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Amorphous silicon

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Full-Text Articles in Physics

Chemical Vapor Deposited Amorphous Silicon For Use In Photothermal Conversion, David D. Allred, D. C. Booth, M. Janai, G. Weiser, B. O. Seraphin Nov 1978

Chemical Vapor Deposited Amorphous Silicon For Use In Photothermal Conversion, David D. Allred, D. C. Booth, M. Janai, G. Weiser, B. O. Seraphin

Faculty Publications

Efficient photothermal conversion requires surfaces of high solar absorptance and low thermal emittance. This can be accomplished by the tandem action of a good infrared reflector overlaid by a film of sufficient solar absorptance that is transparent in the infrared. Crystalline silicon is a suitable candidate for the absorber layer. Its indirect band gap, however, results in a shallow absorption edge that extends to far into the visible. In contrast, the absorption edge of amorphous silicon is steeper and located farther into the infrared, resulting in a larger solar absorptance. We report on the fabrication of amorphous silicon absorbers by …


The Use Of Nuclear Reactions And Sims For Quantitative Depth Profiling Of Hydrogen In Amorphous Silicon, David D. Allred, G. J. Clark, C. W. White, B. R. Appleton, C. W. Magee, D. E. Carlson Aug 1977

The Use Of Nuclear Reactions And Sims For Quantitative Depth Profiling Of Hydrogen In Amorphous Silicon, David D. Allred, G. J. Clark, C. W. White, B. R. Appleton, C. W. Magee, D. E. Carlson

Faculty Publications

Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions [1H(15N,αγ)12C and 1H(19F,αγ)16O] and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at % H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis …