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Full-Text Articles in Mathematics
Statistical Models For Hot Electron Degradation In Nano-Scaled Mosfet Devices, Suk Joo Bae, Seong-Joon Kim, Way Kuo, Paul H. Kvam
Statistical Models For Hot Electron Degradation In Nano-Scaled Mosfet Devices, Suk Joo Bae, Seong-Joon Kim, Way Kuo, Paul H. Kvam
Department of Math & Statistics Faculty Publications
In a MOS structure, the generation of hot carrier interface states is a critical feature of the item's reliability. On the nano-scale, there are problems with degradation in transconductance, shift in threshold voltage, and decrease in drain current capability. Quantum mechanics has been used to relate this decrease to degradation, and device failure. Although the lifetime, and degradation of a device are typically used to characterize its reliability, in this paper we model the distribution of hot-electron activation energies, which has appeal because it exhibits a two-point discrete mixture of logistic distributions. The logistic mixture presents computational problems that are …
Reliability Estimation Based On System Data With An Unknown Load Share Rule, Hyoungtae Kim, Paul H. Kvam
Reliability Estimation Based On System Data With An Unknown Load Share Rule, Hyoungtae Kim, Paul H. Kvam
Department of Math & Statistics Faculty Publications
We consider a multicomponent load-sharing system in which the failure rate of a given component depends on the set of working components at any given time. Such systems can arise in software reliability models and in multivariate failure-time models in biostatistics, for example. A load-share rule dictates how stress or load is redistributed to the surviving components after a component fails within the system. In this paper, we assume the load share rule is unknown and derive methods for statistical inference on load-share parameters based on maximum likelihood. Components with (individual) constant failure rates are observed in two environments: (1) …