Open Access. Powered by Scholars. Published by Universities.®

Mathematics Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 2 of 2

Full-Text Articles in Mathematics

Statistical Models For Hot Electron Degradation In Nano-Scaled Mosfet Devices, Suk Joo Bae, Seong-Joon Kim, Way Kuo, Paul H. Kvam Jan 2007

Statistical Models For Hot Electron Degradation In Nano-Scaled Mosfet Devices, Suk Joo Bae, Seong-Joon Kim, Way Kuo, Paul H. Kvam

Department of Math & Statistics Faculty Publications

In a MOS structure, the generation of hot carrier interface states is a critical feature of the item's reliability. On the nano-scale, there are problems with degradation in transconductance, shift in threshold voltage, and decrease in drain current capability. Quantum mechanics has been used to relate this decrease to degradation, and device failure. Although the lifetime, and degradation of a device are typically used to characterize its reliability, in this paper we model the distribution of hot-electron activation energies, which has appeal because it exhibits a two-point discrete mixture of logistic distributions. The logistic mixture presents computational problems that are …


Degradation Models And Implied Lifetime Distributions, Suk Joo Bae, Way Kuo, Paul H. Kvam Jan 2007

Degradation Models And Implied Lifetime Distributions, Suk Joo Bae, Way Kuo, Paul H. Kvam

Department of Math & Statistics Faculty Publications

In experiments where failure times are sparse, degradation analysis is useful for the analysis of failure time distributions in reliability studies. This research investigates the link between a practitioner's selected degradation model and the resulting lifetime model. Simple additive and multiplicative models with single random effects are featured. Results show that seemingly innocuous assumptions of the degradation path create surprising restrictions on the lifetime distribution. These constraints are described in terms of failure rate and distribution classes.