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Research Progress Of Sio2 Regrowth During Selective Etching Process In 3d Nand Manufacture Procedure, Zi-Han Zhou, Yun-Wen Wu, Ming Li, Su Wang
Research Progress Of Sio2 Regrowth During Selective Etching Process In 3d Nand Manufacture Procedure, Zi-Han Zhou, Yun-Wen Wu, Ming Li, Su Wang
Journal of Electrochemistry
As one of the most significant memory chips in semiconductor market, NAND has been developed from two-dimension (2D) to three-dimension (3D). Due to the three-dimensional memory structure of 3D NAND, the capacity density, read-write speed and reliability of memory chips have been greatly improved, as well as the reduction of power dissipation. It is by nitride-oxide selective etching process in the alternate stacked structure of 3D NAND that the inter-dielectric layers can be obtained. The more stack layers, the better performance of chips will be. Meanwhile, however, silicon dioxide (SiO2) would regrow on the corner of oxide layers, …