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Research Progresses Of Cobalt Interconnect And Superfilling By Electroplating In Chips, Li-Jun Wei, Zi-Han Zhou, Yun-Wen Wu, Ming Li, Su Wang

Journal of Electrochemistry

Copper interconnect using dual damascene technology has always been the main means for metallization in the back end of line process. However, with the size effect becoming more and more obvious due to feature size reduction, copper interconnect can no longer meet the demand for high circuit speed in Post-Moore era. Following copper interconnection, cobalt interconnection in chips attracts much attention as an interconnect technology by the next generation, which has been introduced in 7 nm node of integrated circuit manufacturing and below. The electron mean free path of cobalt (~10 nm) is much shorter than copper’s (39 nm), thus …