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Full-Text Articles in Chemistry
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
PS layer on n+Si with (111) orientation prepered by means of photoelectrochemically etched has photoluminescent (PL) ability like PS layer on usual nSi. The data of PL spectra and quenching are given.
Electroluminescence Of Photoelectrochemically Etched N + Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Electroluminescence Of Photoelectrochemically Etched N + Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
Porous silicon with micrometer size pores, which is made on n + Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S 2O 2- 8, which leads to radiative recombination. The energy band diagram based on n + Si (E g=1.1 eV)/PS(E g=1.8 eV) junction is proposed.
Preparation Of Powder Precursors And Evaporation Of Photoconductive Indium Sulfide Films, Chris Barber, Robert Engelken, Brandon Kemp, Wasim Aleem, Imran Khan, Chris Edrington, Michael Buck, Clayton Workman, Anup Thapa, Tom Jakobs
Preparation Of Powder Precursors And Evaporation Of Photoconductive Indium Sulfide Films, Chris Barber, Robert Engelken, Brandon Kemp, Wasim Aleem, Imran Khan, Chris Edrington, Michael Buck, Clayton Workman, Anup Thapa, Tom Jakobs
Journal of the Arkansas Academy of Science
We have demonstrated significant photoconductance in indium sulfide thin films prepared by thermal vacuum evaporation ofIn2$3 powders synthesized in-house by chemical precipitation ofInCl3 or In(CH3COO)3, and (NH4)2S or Na2S. The Delta G lambda/Gdark values have been as high as 0.1 in the initial unoptimized films. Excess sulfur (via a mixture of polysulfide and sulfide ions in the synthesis bath) appears to be important in achieving reproducible and large photoconductivities. In2S3 is particularly attractive as a lower toxicity alternative to CdS in optoelectronic applications such as photovoltaic and photoconductive cells.