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Electroluminescence Of Photoelectrochemically Etched N + Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

Porous silicon with micrometer size pores, which is made on n + Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S 2O 2- 8, which leads to radiative recombination. The energy band diagram based on n + Si (E g=1.1 eV)/PS(E g=1.8 eV) junction is proposed.