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Full-Text Articles in Chemistry
Stm And Electrochemical Investigation Of Homoepitaxial Boron-Doped Cvd Diamond Films, John B. Cooper, Jason A. Moulton, Sacharia Albin, Bing Xiao
Stm And Electrochemical Investigation Of Homoepitaxial Boron-Doped Cvd Diamond Films, John B. Cooper, Jason A. Moulton, Sacharia Albin, Bing Xiao
Chemistry & Biochemistry Faculty Publications
Homoepitaxial growth of boron-doped CVD diamond films was carried out on (100) and (111) oriented substrates. Atomic resolution images were obtained for both (100) and (111) surfaces using scanning tunneling microscopy. STM images reveal the presence of a 2x1-monohydride reconstruction for the untreated (100) surface and a lxl reconstruction for the untreated (111) surface. No other atomically resolved reconstructions were observed under a wide range of growth conditions. Non-aqueous electrochemical investigations were carried out on the films exhibiting atomically resolved reconstructions. Evidence for potential-induced surface-reconstruction and surface chemical modification of the (100) 2xl-monohydride surface has been observed.
Boron-Doped Homoepitaxial Diamond (100) Film Investigated By Scanning Tunneling Microscopy, Bing Xiao, Weihai Fu, Sacharia Albin, Jason Moulton, John Cooper
Boron-Doped Homoepitaxial Diamond (100) Film Investigated By Scanning Tunneling Microscopy, Bing Xiao, Weihai Fu, Sacharia Albin, Jason Moulton, John Cooper
Electrical & Computer Engineering Faculty Publications
Conducting epitaxial diamond films of high quality are essential for many diamond studies and diamond electronic device fabrication. We have grown boron-doped epitaxial diamond films on type Ila natural diamond (100) substrates by microwave plasma chemical vapor deposition. A gas mixture of H2/CH4 was used. Boron doping was done by placing solid sources of pure boron in the microwave plasma. Homoepitaxial films with atomic smoothness were achieved under the following growth conditions: substrate temperature 900 °C, gas pressure 40 Torr, and gas flow rates of H2/CH4 = 900/7.2 seem. The growth rate was 0.87 …