Physical Sciences and Mathematics Commons^™

Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich

Physics Faculty Publications

Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size. However, the stability of driven topological defects remains largely unexplored. Here we address this issue and investigate numerically …

The Effect Of Processing Conditions On The Energetic Diagram Of Cdte Thin Films Studied By Photoluminescence, Shamara P. Collins

USF Tampa Graduate Theses and Dissertations

The photovoltaic properties of CdTe-based thin films depend on recombination levels formed in the CdTe layer and at the heterojunction. The localized states are resultant of structural defects (metal sublattice, chalcogen sublattice, interstitial), controlled doping, deposition process, and/or post-deposition annealing. The photoluminescence study of CdTe thin films, from both the bulk and heterojunction, can reveal radiative states due to different defects or impurities. Identification of defects allows for potential explanation of their roles and influence on solar cell performance. A thorough understanding of the material properties responsible for solar cell performance is critical in further advancing the efficiency of devices. …

Defect-Related Magnetic Properties Of Nanostructured Nickel Oxide Thin Films For Solar Cell Applications, Angela E. Ezugwu

Electronic Thesis and Dissertation Repository

Transparent conducting oxides (TCOs) are extensively investigated because of their applications as transparent electrodes in solar cells and light-emitting devices. TCOs of interest include indium-tin oxide, aluminum-doped zinc oxide, nickel oxide (NiO), and their combinations. There is strong interest in NiO because no heteroatoms are required to “dope” it at high transparency levels. It has been speculated that paramagnetic defects due to Ni³⁺ centers and O interstitials are responsible for the electrical conductivity of otherwise insulating and antiferromagnetic NiO, but direct investigation of such defects has been limited. Here, the electrical conductivity in nanostructured NiO thin films is investigated …

In Situ Extrinsic Doping Of Cdte Thin Films For Photovoltaic Applications, Imran Suhrid Khan

USF Tampa Graduate Theses and Dissertations

The Cadmium Telluride thin film solar cell is one of the leading photovoltaic technologies. Efficiency improvements in the past decade made it a very attractive and practical source of renewable energy. Considering the theoretical limit, there is still room for improvement, especially the cell’s open circuit voltage (VOC). To improve VOC, the p-type carrier concentration and minority carrier lifetime of the CdTe absorber needs to be improved. Both these parameters are directly related to the point defect distribution of the semiconductor, which is a function of deposition stoichiometry, dopant incorporation and post-deposition treatments.

CdTe films were deposited by the Elemental …

Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf

Faculty Publications

Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the …