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Full-Text Articles in Physical Sciences and Mathematics

Linear Theory Of Non-Neutral Plasma Equilibrium In A Tilted Magnetic Field, Ross L. Spencer, Grant W. Hart Nov 1992

Linear Theory Of Non-Neutral Plasma Equilibrium In A Tilted Magnetic Field, Ross L. Spencer, Grant W. Hart

Faculty Publications

A linear perturbation expansion has been found that allows the rapid and accurate calculation of the response of a non-neutral plasma to a tilted magnetic field. The results of the calculation have been found to agree with previous three-dimensional equilibrium calculations, and also to agree with Keinigs' [Phys. Fluids 24, 860 (1981)] calculation of zero-frequency resonances caused by magnetic field errors. This expansion also allows the perturbed velocity to be calculated. It is speculated that this perturbed flow may be related to the enhanced radial transport in a non-neutral plasma with a tilted magnetic field.


Use Of Raman Spectroscopy In Characterizing Soft X-Ray Multilayers: Tools In Understanding Structure And Interfaces, Ming Cai, Qi Wang, David D. Allred, Larry V. Knight, Dorian M. Hatch, A. Reyes-Mena, Guizhong Zhang Oct 1992

Use Of Raman Spectroscopy In Characterizing Soft X-Ray Multilayers: Tools In Understanding Structure And Interfaces, Ming Cai, Qi Wang, David D. Allred, Larry V. Knight, Dorian M. Hatch, A. Reyes-Mena, Guizhong Zhang

Faculty Publications

Our group is studying the structure and interfaces of soft x-ray multilayers by various techniques including x-ray diffraction and Raman spectroscopy. Raman spectroscopy is particularly useful since it is sensitive to the identity of individual bonds and thus can potentially characterize the abruptness of interfaces in multilayers. Blocking interfacial mixing is very important in achieving and maintaining high reflectivity. We report our studies of the as-deposited and postannealed structure of Mo/Si and W/C multilayers. The Mo/Si system is probably the most widely studied multilayer currently because of its potential applications for soft x-ray projection lithography for the range of 13 …


Pressure Dependence Of The Thermal Conductivity Of Pyrophyllite To 40 Kbar, Wei Chen, Daniel L. Decker Mar 1992

Pressure Dependence Of The Thermal Conductivity Of Pyrophyllite To 40 Kbar, Wei Chen, Daniel L. Decker

Faculty Publications

A mathematical model for calculating the temperature distribution as a function of power delivered to a line source and the thermal conductivity of the surrounding medium in the pressure cell of a cubic-anvil press was derived. The model will handle anisotropic thermal conductivities. A simple sample assembly consisting of a line source and two or three thermocouple junctions is described. A comparison of measured to calculated temperatures yields the thermal conductivity. Thermal conductivity measurements were made on natural pyrophyllite and baked pyrophyllite to 40 kbar. For the natural pyrophyllite the thermal conductivity parallel to the bedding plane at room temperature …


Characterization Of As-Prepared And Annealed W/C Multilayer Thin Films, David D. Allred, Qi Wang, Jesus González-Hernández, B. S. Chao, D. A. Pawlik Jan 1992

Characterization Of As-Prepared And Annealed W/C Multilayer Thin Films, David D. Allred, Qi Wang, Jesus González-Hernández, B. S. Chao, D. A. Pawlik

Faculty Publications

Tungsten/carbon (W/C) multilayer thin films were prepared by dc magnetron sputtering. All samples consisted of 30 layer pairs with a nominal d-spacing varying from 2.5 to 14 nm, the W layer thickness was kept at 2 nm in all samples. The W/C multilayers were subjected to isochronal anneals in a quartz tube furnace at the temperature range from 500 to 950 °C under a flow of high purity Ar gas. X-ray diffraction, Raman scattering, and Auger depth profile were used to characterize the structure of the as-prepared and annealed multilayer films. Both the W and C layers appear to be …


X-Ray Diode Using A Silicon Field Emission Photocathode, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena Jan 1992

X-Ray Diode Using A Silicon Field Emission Photocathode, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena

Faculty Publications

We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. The points were used as electron emitters. No high vacuum cesiation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlKα x-rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.


Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena Jan 1992

Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena

Faculty Publications

The discovery and understanding of the photoelectric effect led to the study of photoemissive materials fall into two major categories: classical photoemitters and negative-electron-affinity (NEA) materials. Classical photoemitters usually involve an alkali metal, a group-V element such as phosphorus, silver, and/or oxygen. An example is the Ag-O-Cs (S1) photoemitter. NEA photocathodes consist of a photoconductive single crystal semiconductor covered with a thin layer of cesium and oxygen. This layer lowers the work function of the photocathode. A dipole layer is formed at the surface, and band bending occurs. This lowers the effective work function. An example is the GaAs(CsO) photocathode …