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Full-Text Articles in Physical Sciences and Mathematics
Structure Study Of Al+Al2o3 Composite By Atomic Force Microscopy, D. S. Koleukh, A. S. Kaygorodov, S. V. Zayats, S. N. Paranin
Structure Study Of Al+Al2o3 Composite By Atomic Force Microscopy, D. S. Koleukh, A. S. Kaygorodov, S. V. Zayats, S. N. Paranin
Eurasian Journal of Physics and Functional Materials
The structure of a metal matrix composite based on aluminum containing 6, 17 and 24 wt % Al2 O3 was studied by atomic force microscopy. The composite was prepared by the method of magneticpulse compaction from aluminum nanopowder obtained by the electric wire explosion method. The samples compacted at 400 ◦ C have more clearly expressed grain boundaries than those obtained at room temperature. The structure of a composite subjected to dynamic plastic deformation is studied.
Some Radiation Effects In Ii-Vi Quantum Dots, M. B. Sharibaev, Q. A. Ismailov
Some Radiation Effects In Ii-Vi Quantum Dots, M. B. Sharibaev, Q. A. Ismailov
Eurasian Journal of Physics and Functional Materials
The effect of electron irradiation (E=0.6-1.8 MeV) on the optical characteristics (photoluminescence, PL) of CdTe/ZnTe structures with quantum dots, QDs, was investigated in the temperature range from 4.2 to 250 K. The data on the influence of irradiation on the temperature dependence of PL intensity, energy position and PL line width, W, from QDs were obtained. The narrowing of PL band and the blue shift of the QD peak position are explained by quenching of the low energy component connected with larger QDs. A slight decrease in PL intensity for both QDs and the buffer ZnTe layer as well as …
Influence Of Structural Defects In Silicon On Formation Of Photosensitive Heterostructures Mn4si7-Si-Mn4si7 And Mn4si7-Si-M, T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Influence Of Structural Defects In Silicon On Formation Of Photosensitive Heterostructures Mn4si7-Si-Mn4si7 And Mn4si7-Si-M, T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Eurasian Journal of Physics and Functional Materials
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initial structural defects in the near-surface layers of the single-crystal silicon on the penetration of manganese atoms into Si upon doping from the gas phase is shown.It has been established that at high temperatures (T>1050 ◦ C) Mn atoms deposited on the silicon surface group together (due to surface diffusion), forming droplets of liquid manganese, which dissolve the near-surface …