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Limitations In Time Resolved Photoluminescence Of Gallium Nitride Using A Streak Camera, Thomas R. Jost

Theses and Dissertations

Semiconductor performance is often characterized in terms of the rate at which its carrier recombination processes occur. Carrier recombination, including radiative, and Shockley-Read-Hall and Auger (both nonradiative), occurs at ultra-fast times in the picosecond or femtosecond regimes. A device which can measure both spectral data and temporal phenomena at this speed is the streak camera. The capability to do time-resolved spectroscopy of wide band gap semiconductors using a streak camera has been established at AFIT for the first time. Time resolved photoluminescence (TRPL) from samples of gallium nitride were measured at temperatures of 5 K over spectral bands of 36.6 …