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Full-Text Articles in Life Sciences
Data Acquisition And Processing Techniques For Voltage Contrast Measurements, F. A. Dibianca, D. G. Johnson, C. R. Bagnell, E. I. Cole, W. V. Oxford, R. H. Propst, C. A. Smith
Data Acquisition And Processing Techniques For Voltage Contrast Measurements, F. A. Dibianca, D. G. Johnson, C. R. Bagnell, E. I. Cole, W. V. Oxford, R. H. Propst, C. A. Smith
Scanning Electron Microscopy
The effects of several data acquisition techniques on the accuracy of voltage contrast measurements are studied. In particular, the effect of using a voltage reference region directly connected to an external voltage source in performing the image intensity-to-voltage mapping of a node whose voltage is to be determined is examined. This is found to allow improved voltage measurement. The actual reference curves were obtained by least squares fitting the measured intensity-voltage reference data alternately to a quadratic and a cubic function. In addition, various mapping algorithms are considered including ones based alternately on the use of unprocessed, subtracted and normalized …
A High Efficiency Cathodoluminescence System And Its Application To Optical Materials, A. D. Trigg
A High Efficiency Cathodoluminescence System And Its Application To Optical Materials, A. D. Trigg
Scanning Electron Microscopy
A high collection efficiency spectroscopic cathodoluminescence (CL) system based on an in-line ellipsoidal mirror has been constructed for use on a Cambridge S250 scanning electron microscope (SEM). It can be fitted to or removed from the SEM in about 30 minutes and requires no significant modification of the instrument. It can be used to obtain total CL images, monochromatic CL images or CL spectra with an ultimate spectral resolution of 1 nm.
The system has been applied to the study of doped synthetic quartz crystals, optical fibres and optical fibre preforms, and to yttrium aluminium garnet, bismuth silicon oxide and …
Divergent-Beam X-Ray Diffraction In The Scanning Electron Microscopy And Its Use For The Study Of The Semiconductor Epitaxial Layers, J. Hejna
Scanning Electron Microscopy
Among the X-ray techniques belonging to the family of Kassel methods the divergent-beam diffraction method gives the best contrast for semiconductor specimens.
The technique has been accomplished in the scanning electron microscope (SEM) in a back reflection configuration. Epitaxial layers of GaAsSb and GaAsSbP on GaAs [100] oriented substrates were investigated. The diffraction lines from lattice planes giving only high Bragg angles were used. For the purpose of the layer strain analysis, the diffraction experiments were carried out for specimens placed horizontally (the lines {711} type recorded) and for tilted 45° (the lines {551) type recorded). A Cu foil was …