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Gamma And Neutron Irradiation Effect On Ga-Polar And N-Polar Gan Based Diodes, Farnood Mirkhosravi

Optical Science and Engineering ETDs

III-nitride material (GaN) shows a lot of potential for next-generation power electronics. This material is advantageous due to its wide bandgap, high electron mobility, high thermal and mechanical stability, small form factor, and higher radiation tolerance. The higher radiation tolerance makes the GaN-based devices more attractive for harsh-environment applications, like aerospace, nuclear reactor, and fusion facilities, particle accelerators, and post-detonation environments applications.

GaN due to its unique crystal structure can be grown in different orientations and can provide specific advantages in electronic and optoelectronic devices. While the Ga-polar orientation of GaN has been widely investigated for its proprieties, there are …