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Si Implant-Assisted Ohmic Contacts To Gan, Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, Kenneth Jones

US Army Research

The contact resistance, ρ_C, was measured for the traditional Ti/Al/Ni/Au Ohmic contact for samples implanted with Si to >10²⁰ cm^-3 and annealed at 1100, 1150, 1200, or 1250°C for 2, 5 or 10 min using an AlN annealing cap. These results are compared with those for samples annealed in the same way, but were not implanted. The as-grown samples were doped to 3.56 × 10¹⁷ or 6.67 × 10¹⁶ cm^-3 or were unintentionally (UI) doped. In almost all cases, ρ_C for the implanted sample was lower, and a record low ρ_{C …}