Nuclear Engineering Commons^™

Thin Film Alsb Carrier Transport Properties And Room Temperature Radiation Response, Erin Vaughan

Nuclear Engineering ETDs

Theoretical predictions for AlSb material properties have not been realized using bulk growth methods. This research was motivated by advances in molecular beam epitaxial (MBE) growth technology to produce high-quality thin-film AlSb for the purpose of evaluating transport properties and suitability for radiation detection. Simulations using MCNP5 were performed to benchmark an existing silicon surface barrier detector and to predict ideal AlSb detector behavior, with the finding that AlSb should have improved detection efficiency due to the larger atomic number of Sb compared with Si. GaSb diodes were fabricated by both homoepitaxial MBE and ion implantation methods in order to …