Nuclear Engineering Commons^™

Electron Paramagnetic Resonance Spectroscopy And Hall Effect Studies Of The Effects Of Low Energy Electron Energy On Gallium Nitride (Gan), Kevin D. Greene

Theses and Dissertations

The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 10¹⁶- 10¹⁸ electrons/cm². Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due …