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Nuclear Engineering Commons

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Electrical and Computer Engineering

2014

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Low Pressure Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films On Silicon, Thomas Gregory Wulz May 2014

Low Pressure Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films On Silicon, Thomas Gregory Wulz

Masters Theses

Boron carbide thin films were grown on the (100) plane of n-type silicon in a low pressure chemical vapor deposition (CVD) system from the thermal decomposition of boron trichloride and methane reactant gases with hydrogen as a carrier gas. Boron trichloride to methane molar ratio was 5, while the boron trichloride to hydrogen molar ratio was 3.5. Thin film deposition was carried out at 900 degrees Celsius at 25 Torr. The thin films were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Energy Dispersive X-Ray Spectroscopy (EDS), Laser Induced Breakdown Spectroscopy (LIBS), and current-voltage characteristics. The crystallography of …