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Full-Text Articles in Nanoscience and Nanotechnology
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Mehmet R. Dokmeci
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.