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Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock May 2012

Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock

Graduate Theses and Dissertations

Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …


The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson Jan 2012

The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson

Legacy Theses & Dissertations (2009 - 2024)

This dissertation is focused on determining the influence of the copper substrate on graphene grown by \ac{CVD}. Graphene, which can be grown in single atomic layers on copper substrates, has potential applications in future electronic devices. One of the key issues for the use of graphene grown by chemical vapor deposition for device applications is the influence of defects on the transport properties of the graphene. For instance, growth on metal foil substrates results in multi-domain graphene growth because the foil substrates themselves have a variety of different surface terminations. Therefore, they don't serve as a very good template for …