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Homogeneous Algan/Gan Superlattices Grown On Free-Standing (1(1)Over-Bar00) Gan Substrates By Plasma-Assisted Molecular Beam Epitaxy, Jiayi Shao, Dmitri N. Zakharov, Collin Edmunds, Oana Malis, Michael J. Manfra

Birck and NCN Publications

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1 (1) over bar 00) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults …