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Improvement Of Near-Infrared Absorption Linewidth In Algan/Gan Superlattices By Optimization Of Delta-Doping Location, C. Edmunds, L. Tang, J. Shao, D. Li, M. Cervantes, G. Gardner, Dmitri Zakharov, Michael J. Manfra, O. Malis

Birck and NCN Publications

We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the delta-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy. (C) 2012 American Institute …