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Effects Of (Nh(4))(2)S Passivation On The Off-State Performance Of 3-Dimensional Ingaas Metal-Oxide-Semiconductor Field-Effect Transistors, J J Gu, A T. Neal, P D. Ye

Birck and NCN Publications

Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron gate lengths. The effect of (NH(4))(2)S passivation with different concentrations (20%, 10%, or 5%) on the off-state performance of these devices has been systematically studied. 10% (Na(4))(2)S treatment is found to yield the optimized high-k/InP harrier layer interface property, resulting in a minimum subthreshold swing (SS) lower than 100 mV/dec. Moreover, the 3D device structure greatly improves the off-state performance and facilitates enhancement-mode operation. A scaling metrics study has been carried out for 10% (NH(4))(2)S treated 3D devices with gate lengths down to 100 …