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Full-Text Articles in Nanoscience and Nanotechnology
Scattering Mechanisms In A High-Mobility Low-Density Carbon-Doped (100) Gaas Two-Dimensional Hole System, J. D. Watson, S. Mondal, G. A. Csathy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, K. W. West
Scattering Mechanisms In A High-Mobility Low-Density Carbon-Doped (100) Gaas Two-Dimensional Hole System, J. D. Watson, S. Mondal, G. A. Csathy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, K. W. West
Birck and NCN Publications
We report on a systematic study of the density dependence of mobility in a low-density carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T = 50 mK, a mobility of 2.6 x 10(6) cm(2)/Vs at a density p = 6.2 x 10(10)cm(-2) was measured. This is the highest mobility reported for a 2DHS to date. Using a backgated sample geometry, the density dependence of mobility was studied from 2.8 x 10(10) cm(-2) to 1 x 10(11) cm(-2). The mobility vs density cannot be fit to a power law dependence of the form alpha similar to p(alpha) using a single exponent …