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Schottky-Barrier Height Modulation Of Metal/In0.53ga0.47as Interfaces By Insertion Of Atomic-Layer Deposited Ultrathin Al2o3, Runsheng Wang, Min Xu, Peide D. Ye, Ru Huang

Birck and NCN Publications

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height (SBH) at the metal/semiconductor interface. Both n-type and p-type In0.53Ga0.47As are investigated by inserting an atomic-layer deposited Al2O3 interlayer. The results indicate that SBH modulation is more effective at the n-InGaAs interface than the p-InGaAs interface for the same Al2O3 thickness. However, the Fermi level at the metal/InGaAs interface is still weakly pinned even after inserting 2 nm …