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Full-Text Articles in Nanoscience and Nanotechnology
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Shireen Adenwalla Papers
Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Legacy Theses & Dissertations (2009 - 2024)
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning …