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Full-Text Articles in Nanoscience and Nanotechnology
Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak
Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak
Legacy Theses & Dissertations (2009 - 2024)
The microelectronic industry’s movement toward smaller feature sizes has necessitated a shift to extreme ultraviolet (EUV) lithography to enable cost-effective patterning of sub 20-nm features. However, this shift from 193-nm lithography (6.4 eV) to EUV (13.5 nm, 92 eV) poses significant obstacles, such that photolithography is now operating in an energy range above the electron binding energies of common atomic species in photoresists. This significant energy increase means the chemical reactions happening within operate in the realm of radiation chemistry instead of photochemistry since the observed reactions are due almost entirely to the action of photoelectrons as they dissipate their …
Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai
Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai
Legacy Theses & Dissertations (2009 - 2024)
Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in …
Investigation Of The Optical And Sensing Characteristics Of Nanoparticle Arrays For High Temperature Applications, Gnanaprakash Dharmalingam
Investigation Of The Optical And Sensing Characteristics Of Nanoparticle Arrays For High Temperature Applications, Gnanaprakash Dharmalingam
Legacy Theses & Dissertations (2009 - 2024)
The monitoring of polluting gases such as CO and NOx emitted from gas turbines in power plants and aircraft is important in order to both reduce the effects of such gases on the environment as well as to optimize the performance of the respective power system. The need for emissions monitoring systems is further realized from increased regulatory requirements that are being instituted as a result of the environmental impact from increased air travel. Specifically, it is estimated that the contributions from aircraft emissions to total NOx emissions will increase from 4% to 17% between 2008 and 2020. Extensive fuel …
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Legacy Theses & Dissertations (2009 - 2024)
As extreme ultraviolet lithography (EUVL) prepares to be incorporated into high volume manufacturing, many challenges must be addressed. Among these challenges, a need for photoresist improvement exists. The work described here will look into some of the problems and challenges facing EUV resists, in particular out-of-band (OOB) wavelengths of light and their interaction with photoresists. Studies have been completed on the effect of out-of-band light on photoresists [1]-[3]. It is imperative that solutions to suppress the deep ultraviolet (DUV) OOB light be incorporated into next generation EUV production tools due to concerns of decreased performance of lithography, and an increase …
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Legacy Theses & Dissertations (2009 - 2024)
Extreme Ultraviolet (EUV) lithography is currently the best option for replacing 193-nm lithography in future IC fabrication. For EUV to be successful, however, there are a number of challenges that must be overcome. Current resist designs struggle to meet the demands of future lithography nodes. We propose the best way to overcome these obstacles is through the design of novel resist systems.
The Effect Of Energy Deposition On Pattern Resolution In Electron Beam Lithography, Ananthan Raghunathan
The Effect Of Energy Deposition On Pattern Resolution In Electron Beam Lithography, Ananthan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
Electron beam lithography is one of the most important tools for nanofabrication. Electron beam lithography has consistently been able to offer higher resolution, typically better than 10 nm or so, compared to other techniques. In this work the contribution of electron-substrate interaction to pattern resolution is investigated.
Local Area Mask Patterning Of Extreme Ultraviolet Lithography Reticles For Native Defect Analysis, Adam Lyons
Local Area Mask Patterning Of Extreme Ultraviolet Lithography Reticles For Native Defect Analysis, Adam Lyons
Legacy Theses & Dissertations (2009 - 2024)
Understanding the nature and behavior of native defects on EUV reticles, particularly their printability, is of critical importance to the successful implementation of EUV lithography for high volume manufacturing, as will be demonstrated in the upcoming chapters. Previous defect characterization work has focused on the examination of programmed defects, native defects on blank reticles, and unaligned native defects on patterned reticles. Each of these approaches has drawbacks, which will be discussed in detail, and the aim of this research is to address these deficiencies by developing a method to pattern features of interest over native defects, enabling the direct observation …
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
Legacy Theses & Dissertations (2009 - 2024)
Three dimensional micro- and nano-structures are commonly used in the field of Photonics, Optoelectronics, Sensors and Biological applications. Although numerous physical models are developed, a major challenge has been in their fabrication which is commonly limited to conventional layer-by-layer techniques. In this dissertation, a novel method for fabricating three dimensional structures using Electron Beam Lithography (EBL) will be presented.
Evaluation Of Chemical Mechanical Planarization (Cmp) For The Removal Of Surface Defects In Extreme Ultraviolet Lithography (Euvl) Mask Substrates, Bradley Halligan Wood
Evaluation Of Chemical Mechanical Planarization (Cmp) For The Removal Of Surface Defects In Extreme Ultraviolet Lithography (Euvl) Mask Substrates, Bradley Halligan Wood
Legacy Theses & Dissertations (2009 - 2024)
A modified CMP process was investigated and developed with the goal of removing surface defects (nanoscale depressions or `pits') from quartz mask blank substrates. Initially, quartz glass wafers were evaluated to observe surface roughness and defect introduction due to low down-force CMP processing. Following analysis of quartz glass wafers subjected to such processing it was determined that a CMP-based processing for pit removal of maskblank substrates was potentially viable. Consequently, a specially-designed mask carrier for investigating and developing CMP-based defect removal from EUV maskblank substrates was mounted on a Strasbaugh 6DS-SP CMP laboratory tool. A series of experiments was performed …
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Legacy Theses & Dissertations (2009 - 2024)
The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Legacy Theses & Dissertations (2009 - 2024)
This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet lithography (EUV) is a promising candidate for next generation lithography. Although EUV has great potential there are still many challenges that must be solved before the technology can be implemented in the high volume manufacturing of semiconductor devices. The lithographic performance of EUV photoresists is one aspect that requires improvement. Particularly, EUV resists need simultaneous improvements in three properties: resolution, line-edge-roughness and sensitivity. The incorporation of acid amplifiers (AAs) in resists is one method to improve all three properties.
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …