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Full-Text Articles in Nanoscience and Nanotechnology

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang Jan 2016

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …


A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan Jan 2010

A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan

Legacy Theses & Dissertations (2009 - 2024)

As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …