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Full-Text Articles in Nanoscience and Nanotechnology

Tensile-Strained Germanium Quantum Dots Grown On Indium Aluminum Arsenide (111)A And (110) By Molecular Beam Epitaxy, Kathryn Eva Sautter May 2021

Tensile-Strained Germanium Quantum Dots Grown On Indium Aluminum Arsenide (111)A And (110) By Molecular Beam Epitaxy, Kathryn Eva Sautter

Boise State University Theses and Dissertations

Molecular beam epitaxy (MBE) enables the growth of semiconductor nanostructures known as tensile-strained quantum dots (TSQDs). The highly tunable nature of TSQD properties means that they are of interest for a wide variety of applications including for infrared (IR) lasers and light-emitting diodes (LEDs), improved tunnel junction efficiency in multijunction solar cell technology, quantum key encryption, and entangled photon emission. In this project, I focus on one of the most technologically important materials, germanium (Ge). Ge has a high gain coefficient, high electron mobility, and low band gap: all excellent properties for optoelectronic applications. Until recently, these technological advantages were …


Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar Jan 2018

Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar

Doctoral Dissertations

"Single-crystal Si is the bedrock of semiconductor devices due to the high crystalline perfection which minimizes electron-hole recombination, and the dense native silicon oxide which minimizes surface states. To expand the palette of electronic materials beyond planar Si, an inexpensive source of highly ordered material is needed that can serve as an inert substrate for the epitaxial growth of grain boundary-free semiconductors, photonic materials, and superconductors. There is also a need for a simple, inexpensive, and scalable fabrication technique for the growth of semiconductor nanostructures and thin films. This dissertation focuses on the fabrication of semiconducting nanowires (polycrystalline Ge & …


The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves Jan 2016

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge1-xSnx alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge1-xSnx thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …


Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman Jan 2012

Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman

Legacy Theses & Dissertations (2009 - 2024)

The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …