Nanoscience and Nanotechnology Commons^™

Plasma-Enhanced Atomic Layer Deposition Of Ruthenium-Titanium Nitride Mixed-Phase Layers For Direct-Plate Liner And Copper Diffusion Barrier Applications, Adam James Gildea

Legacy Theses & Dissertations (2009 - 2024)

Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger …