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Full-Text Articles in Nanoscience and Nanotechnology
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Legacy Theses & Dissertations (2009 - 2024)
The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Legacy Theses & Dissertations (2009 - 2024)
This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet lithography (EUV) is a promising candidate for next generation lithography. Although EUV has great potential there are still many challenges that must be solved before the technology can be implemented in the high volume manufacturing of semiconductor devices. The lithographic performance of EUV photoresists is one aspect that requires improvement. Particularly, EUV resists need simultaneous improvements in three properties: resolution, line-edge-roughness and sensitivity. The incorporation of acid amplifiers (AAs) in resists is one method to improve all three properties.