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Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Quasi-Particle Band Structure And Excitonic Effects In One-Dimensional Atomic Chains, Eesha Sanjay Andharia
Quasi-Particle Band Structure And Excitonic Effects In One-Dimensional Atomic Chains, Eesha Sanjay Andharia
Graduate Theses and Dissertations
The high exciton binding energy in one dimensional (1D) nano-structures makes them prominent for optoelectronic device applications, making it relevant to theoretically investigate their electronic and optical properties. Many-body effects that are not captured by the conventional density functional theory (DFT) have a huge impact in such selenium and tellurium single helical atomic chains. This work goes one step beyond DFT to include the electron self-energy effects within the GW approximation to obtain a corrected quasi-particle electronic structure. Further, the Bethe-Salpeter equation was solved to obtain the absorption spectrum and to capture excitonic effects. Results were obtained using the Hyberstein-Louie …
Mesoscale Computational Studies Of Thin-Film Bijels, Joseph M. Carmack
Mesoscale Computational Studies Of Thin-Film Bijels, Joseph M. Carmack
Graduate Theses and Dissertations
Bijels are a relatively new class of soft materials that have many potential applications in the technology areas of energy, medicine, and environmental sustainability. They are formed by the arrest of binary liquid spinodal decomposition by a dispersion of solid colloidal nanoparticles. This dissertation presents an in-depth simulation study of Bijels constrained to thin-film geometries and in the presence of electric fields. We validate the computational model by comparing simulation results with previous computational modeling and experimental research. In the absence of suspended particles, we demonstrate that the model accurately captures the rich kinetics associated with diffusion-based surface-directed spinodal decomposition. …
Characterization Of Nanoparticles Using Solid State Nanopores, Santoshi Nandivada
Characterization Of Nanoparticles Using Solid State Nanopores, Santoshi Nandivada
Graduate Theses and Dissertations
Solid state nanopores are widely used in detection of highly charged biomolecules like DNA and proteins. In this study, we use a solid state nanopore based device to characterize spherical nanoparticles to estimate their size and electrical charge using the principle of resistive pulse technique. The principle of resistive pulse technique is the method of counting and sizing particles suspended in a fluid medium, which are electrophoretically driven through a channel and produce current blockage signals due to giving rise to a change in its initial current. This change in current is denoted as a current blockage or as a …
Photoluminescence Measurement On Low-Temperature Metal Modulation Epitaxy Grown Gan, Yang Wu
Photoluminescence Measurement On Low-Temperature Metal Modulation Epitaxy Grown Gan, Yang Wu
Graduate Theses and Dissertations
A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epitaxy (MME) grown GaN. By comparing the PL signal from high temperature grown GaN buffer layers, and MME grown cap layers on top of the buffer layers, it was found that MME grown GaN cap has a significantly greater defect-related emission. The band edge PL from MME grown GaN found to be 3.51eV at low temperature. The binding energy of the exciton in GaN is determined to be 21meV through temperature dependence analysis. A PL peak at 3.29eV was found in the luminescence of the MME grown cap layer, …