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Articles 1 - 6 of 6
Full-Text Articles in Nanoscience and Nanotechnology
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen
Legacy Theses & Dissertations (2009 - 2024)
The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications …
Ion Beam Modification Of Single Crystal Sapphire For High Temperature Optical Waveguiding, William Spratt
Ion Beam Modification Of Single Crystal Sapphire For High Temperature Optical Waveguiding, William Spratt
Legacy Theses & Dissertations (2009 - 2024)
High temperature environments (>1000°C) provide a significant challenge for fiber optic based sensing due to the poor physical properties of silica fiber at elevated temperature. Not only does silica soften above 1000°C, but the dopants that are responsible for the refractive index change between the core and cladding diffuse, reducing the fibers effectiveness as a waveguide. Single-crystal sapphire fiber has the potential to supplement fiber sensing at high temperature however sapphire fiber is unclad and no cladding methods exist that withstand high temperatures. In addition to higher losses the lack of a cladding also leads to decreased sensitivity due …
Ion Beam Nano-Engineering Of Erbium Doped Silicon For Enhanced Light Emission At 1.54 Microns, Sebastian Naczas
Ion Beam Nano-Engineering Of Erbium Doped Silicon For Enhanced Light Emission At 1.54 Microns, Sebastian Naczas
Legacy Theses & Dissertations (2009 - 2024)
Erbium doped silicon is of great interest as a potential light source in Silicon Photonics research due to its light emission at 1.54 μm, which corresponds to the minimal loss of optical transmission in silica fibers for telecommunications. In this thesis a basic mechanism for excitation and de-excitation of Er in Si is reviewed. Based on such fundamental understanding, an innovative approach is proposed and implemented to improve Er luminescence properties through the formation of metal nanoparticles via impurity gettering in Si nanocavities.
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Legacy Theses & Dissertations (2009 - 2024)
The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors …