Nanoscience and Nanotechnology Commons^™

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.

Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant

Graduate Theses and Dissertations

Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …

Design, Fabrication And Testing Of Monolithic Low-Power Passive Sigma-Delta Analog-To-Digital Converters, Angsuman Roy

UNLV Theses, Dissertations, Professional Papers, and Capstones

Analog-to-digital converters are critically important in electronic systems. The

difficulty in meeting high performance parameters increases as integrated circuit design

process technologies advance into the deep nanometer region. Sigma-delta analog-todigital

converters are an attractive option to fulfill many data converter requirements.

These data converters offer high performance while relaxing requirements on the precision

of components within an integrated circuit. Despite this, the active integrators found within

sigma-delta analog-to-digital converters present two main challenges. These challenges are

the power consumption of the active amplifier and achieving gain-bandwidth necessary for

sigma-delta data converters in deep nanometer process technologies. Both of these

challenges …

The Development Of Iii-V Semiconductor Mosfets For Future Cmos Applications, Andrew M. Greene

Legacy Theses & Dissertations (2009 - 2024)

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance …

Size-Dependent Interactions Of Metal Nanoparticles With Fluorophores And Semiconductors, Liyana A. Wajira Ariyadasa

Dissertations

In recent years, nanoscale metallic particles have gained considerable interest due to their potential applications in advanced technology. Despite such interest, synthetic procedures that produce gram-scale, well-defined metallic nanoparticles with controlled size and shape, especially with diameters less than 5 nm remains a challenge. Our work has focused on developing synthetic procedures that produce well-defined platinum and palladium metal nanoparticles in the 1-5 nm size range. Thioether ligands were used as stabilizers and resulted in metal nanoparticles with controlled size. The nanoparticles were characterized using transmission electron microscopy (TEM), x-ray diffraction (XRD), selected area electron diffraction (SAED), x-ray photoelectron spectroscopy …