Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons™

Open Access. Powered by Scholars. Published by Universities.®

Theses/Dissertations

PDF

2015

University at Albany, State University of New York

Articles 1 - 23 of 23

Full-Text Articles in Nanoscience and Nanotechnology

Alloy Solute Interactions At Grain Boundaries And Nanoscale Interfaces In Copper, Luke Prestowitz May 2015

Alloy Solute Interactions At Grain Boundaries And Nanoscale Interfaces In Copper, Luke Prestowitz

Nanoscale Science & Engineering (discontinued with class year 2014)

To study grain boundary solute interactions we have developed recipes for co-electrodeposition of dilute copper alloys including Cu(Ni) and Cu(Co). Secondary Ion Mass Spectrometry (SIMS) was used to analyze the incorporation of solute into the copper film. In addition to the co-electrodeposition process we also used a drive-in diffusion model for Au, Ag, Co, and Ni. Atomic imaging in a scanning transmission electron microscope (STEM) was used to visualize and investigate solute at grain boundaries and interfaces in polygranular copper films. By understanding these interactions and pathways of alloying solutes in copper microstructures, we can more accurately predict alloying behavior …

Go to article

Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli May 2015

Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli

Nanoscale Science & Engineering (discontinued with class year 2014)

We have developed organometallic carboxylate compounds [RnM(O2CR’)2] capable of acting as negative-tone EUV resists. Overall, the best and fastest resists contain antimony, are pentavalent and the carboxylate group contains a polymerizable olefin (e.g. acrylate, methacrylate or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization of olefins in the exposed region. We have performed a systematic sensitivity study of molecules of the type RnM(O2CR’)2 where we have studied seven R groups, four main group metals (M), and three polymerizable carboxylate groups (O2CR’). We found that the greatest predictor of sensitivity of the RnSb(O2CR’)2 resists is their level of …

Go to article

Initiated Chemical Vapor Deposition (Icvd) Polymer Thin Films : Structure-Property Effects On Thermal Degradation And Adhesion, Vijay Jain Bharamaiah Jeevendrakumar Jan 2015

Initiated Chemical Vapor Deposition (Icvd) Polymer Thin Films : Structure-Property Effects On Thermal Degradation And Adhesion, Vijay Jain Bharamaiah Jeevendrakumar

Legacy Theses & Dissertations (2009 - 2024)

Opportunities and challenges for chemical vapor deposition (CVD) of polymer thin films stems from their applications in electronics, sensors, and adhesives with demands for control over film composition, conformity and stability. Initiated chemical vapor deposition (iCVD) is a subset of the CVD technique that conjoins bulk free-radical polymerization chemistry with gas-phase processing. The novelty of iCVD technique stems from the use of an initiator that can be activated at low energies (150 – 300 °C) to react with surface adsorbed monomer to form a polymer film. This reduces risk for potential unwarranted side-reactions.

Go to article

Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer Jan 2015

Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer

Legacy Theses & Dissertations (2009 - 2024)

Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.

Go to article

Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram Jan 2015

Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram

Legacy Theses & Dissertations (2009 - 2024)

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values

Go to article

Molecular Organometallic Resists Of Tin And Tellurium, Ryan Del Re Jan 2015

Molecular Organometallic Resists Of Tin And Tellurium, Ryan Del Re

Legacy Theses & Dissertations (2009 - 2024)

EUV photoresists made from organotin and organotellurium dicarboxylates were lithographically evaluated for photosensitivity and dense-line patterning. The effects of ligand structure and central metal are explored through systematic molecular modification. Through this work, two photoresists were discovered that are capable of high resolution and low line-edge roughness. Dibenzyltin dipivalate resolves 22-nm dense lines with 1.4-nm LER and dibenzyltin dibenzoate resolves 35-nm dense lines with 1.1-nm LER.

Go to article

The Development Of Iii-V Semiconductor Mosfets For Future Cmos Applications, Andrew M. Greene Jan 2015

The Development Of Iii-V Semiconductor Mosfets For Future Cmos Applications, Andrew M. Greene

Legacy Theses & Dissertations (2009 - 2024)

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance …

Go to article

Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu Jan 2015

Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …

Go to article

Two-Dimensional Chalcogenides : Material Synthesis And Nano-Device Applications, Robin Bay Jacobs-Gedrim Jan 2015

Two-Dimensional Chalcogenides : Material Synthesis And Nano-Device Applications, Robin Bay Jacobs-Gedrim

Legacy Theses & Dissertations (2009 - 2024)

Low-dimensional nanostructures exhibit distinct properties from their bulk counterparts. Here the synthesis of novel low-dimensional nanostructures is demonstrated using both top down and bottom up processes and their properties are investigated. Two-dimensional (2D) binary sesquichalcogenides are introduced as a viable material platform for phase change random access memory, photodetection, and the investigation of topological insulator surface states. An exponential relationship is observed between layer thickness and energy consumption during switching of 2D phase change devices, ultra-high responsivity in 2D photoresistors, and surface-rich conduction in 2D topological insulator nanoplates. Additionally, methods for the assessment of chemical purity, stoichiometry, and dimensions of …

Go to article

Hexagonal Boron Nitride : Ubiquitous Layered Dielectric For Two-Dimensional Electronics, Nikhil Jain Jan 2015

Hexagonal Boron Nitride : Ubiquitous Layered Dielectric For Two-Dimensional Electronics, Nikhil Jain

Legacy Theses & Dissertations (2009 - 2024)

Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in “3D graphene” superlattice. First, CVD-grown graphene on h-BN substrate …

Go to article

Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel Jan 2015

Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel

Legacy Theses & Dissertations (2009 - 2024)

Electron beams are useful in many applications because they can be focused down to a spot far exceeding the physical limit of focusing visible light or x-rays. Additionally, electron beams are useful in transferring concentrated amounts of energy to a very small well defined region of a target for a fixed duration. This has led to the development of both scanning electron microscopes (SEMs) and electron beam lithography. The goal of this work was to develop a general method that accurately and easily yields the best estimate of the electron current density distribution of a focused electron beam, known as …

Go to article

Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar Jan 2015

Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on …

Go to article

Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich Jan 2015

Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich

Legacy Theses & Dissertations (2009 - 2024)

III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …

Go to article

Comparison Of Glucose, Fructose And Sucrose Amperometric And Thermal Sensors For Detection Of Carbohydrates In Living Plant Tissue, Scott Mcadoo Jan 2015

Comparison Of Glucose, Fructose And Sucrose Amperometric And Thermal Sensors For Detection Of Carbohydrates In Living Plant Tissue, Scott Mcadoo

Legacy Theses & Dissertations (2009 - 2024)

Ecologists currently cannot test concentrations of carbohydrates in sap in vivo. Testing carbohydrates with current technology would require destructive tissue sampling. The tissue sampling involves large amounts of time and money to collect and test. Aphids are an insect that can bypass a tree’s passive immune system and feed off a phloem region for weeks. A series of enzymatic biosensors could be used to detect the concentration changes of specific carbohydrates. A calcium chelant can be added to defeat a tree’s immune system like an aphid. The detection of three carbohydrates, fructose, glucose and sucrose are involved in this study. …

Go to article

Understanding Transcriptional Enhancement In Monoclonal Antibody-Producing Chinese Hamster Ovary Cells, Sarah E. Nicoletti Jan 2015

Understanding Transcriptional Enhancement In Monoclonal Antibody-Producing Chinese Hamster Ovary Cells, Sarah E. Nicoletti

Legacy Theses & Dissertations (2009 - 2024)

With the demand for monoclonal antibody (mAB) therapeutics continually increasing, the need to better understand what makes a high productivity clone has gained substantial interest. Monoclonal antibody producing Chinese hamster ovary (CHO) cells with different productivities were provided by a biopharmaceutical company for investigation. Gene copy numbers, mRNA levels, and mAb productivities were previously determined for two low producing clones and their amplified progeny. These results showed an increase in mRNA copy number in amplified clones, which correlated to the observed increases in specific productivity of these clones. The presence of multiple copies of mRNA per one copy of DNA …

Go to article

The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien Jan 2015

The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien

Legacy Theses & Dissertations (2009 - 2024)

Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines.

Go to article

Plasmonic Enhancement Of The Ellipsometric Measurement Of Thin Metal Lines, Samuel O'Mullane Jan 2015

Plasmonic Enhancement Of The Ellipsometric Measurement Of Thin Metal Lines, Samuel O'Mullane

Legacy Theses & Dissertations (2009 - 2024)

In semiconductor manufacturing, defect analysis and process control are extremely important for optimal device performance and yield enhancement. One in-line tool used for quick optical characterization is the ellipsometer. Because it is nondestructive and largely automated, ellipsometers have become key tools in this process. Scatterometry based optical critical dimension (OCD) analysis is the full optical modeling of ellipsometric measurements using regression-based structures. Specifically for metallic gratings, OCD has a couple of challenges. First, the sensitivity to changes in the width of the metal lines is decreasing for smaller widths. Second, the main scatterometry spectral simulation method (rigorous coupled wave analysis, …

Go to article

Characterization Of Metallic And Semimetallic Oxide Nanoparticles In Industrial Wastewater And Associated Toxicity, Gary Roth Jan 2015

Characterization Of Metallic And Semimetallic Oxide Nanoparticles In Industrial Wastewater And Associated Toxicity, Gary Roth

Legacy Theses & Dissertations (2009 - 2024)

Engineered nanomaterials (ENMs) play an increasing role in manufacturing and consumer products. Currently, there is no standard approach to studying ENM toxicity, and a growing body of literature suggests that ENMs may have toxicity differing from similar compounds in bulk or dissolved form. I examined ENMs used in the semiconductor manufacturing process called chemical-mechanical planarization (CMP) for their properties, removal in the wastewater treatment system (WWT), in-vitro toxicity, and location post-inhalation in-vivo. It was found that ENMs in CMP slurries have morphology determined by their elemental composition, but assessment of size and concentration can differ substantially between accepted techniques. Particles …

Go to article

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens Jan 2015

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Go to article

Creation Of A 3d Construct To Aid Cell Migration And Promote Cell Capture, Joseph Michael Sanders Jan 2015

Creation Of A 3d Construct To Aid Cell Migration And Promote Cell Capture, Joseph Michael Sanders

Legacy Theses & Dissertations (2009 - 2024)

Most cancer-related deaths are attributed to metastasis. The tumor microenvironment is a complex environment which is not fully understood. The Nano Intravital Device (NANIVID) is a versatile, biocompatible device that allows for the manipulation of the tumor microenvironment in vitro and in vivo, providing a platform to study various aspects of tumor progression. The purpose of this study is to modify the NANIVID to resemble the tumor microenvironment in order to allow for a seamless transition from the in vivo environment into the engineered environment within the NANIVID. This engineered microenvironment will promote cell migration and cell capture. It has …

Go to article

Bioengineering In Vitro Human Trabecular Meshwork Models For Glaucoma Therapeutic Screening, Karen Yud Torrejon Jan 2015

Bioengineering In Vitro Human Trabecular Meshwork Models For Glaucoma Therapeutic Screening, Karen Yud Torrejon

Legacy Theses & Dissertations (2009 - 2024)

Glaucoma refers to a group of slowly progressing eye disorders that lead to damage to the optic nerve, resulting in irreversible vision loss. Recent statistics by the World Health Organization places glaucoma as a leading cause of blindness worldwide, affecting nearly 80 million people. Lowering intraocular pressure (IOP) is currently the only effective target for therapeutic intervention in glaucoma. IOP is mostly controlled by the outflow of the aqueous humor (AH) through the trabecular meshwork (TM). The TM and adjacent endothelium of Schlemm’s canal, known as the conventional outflow-tract, control AH outflow and thus determine IOP.

Go to article

Brown Adipogenesis Of Mouse Embryonic Stem Cells In Alginate Microstrands, Andrea Mannarino Unser Jan 2015

Brown Adipogenesis Of Mouse Embryonic Stem Cells In Alginate Microstrands, Andrea Mannarino Unser

Legacy Theses & Dissertations (2009 - 2024)

The ability of brown adipocytes (fat cells) to dissipate energy as heat shows great promise for the treatment of obesity and other metabolic disorders. Employing pluripotent stem cells, with an emphasis on directed differentiation, may overcome many issues currently associated with primary fat cell cultures. However, brown adipocytes are difficult to transplant in vivo due to the instability of fat, in terms of necrosis and neovascularization, once injected. Thus, 3D cell culture systems that have the potential to mimic adipogenic microenvironments are needed, not only to advance brown fat implantation, but also to better understand the role of brown adipocytes …

Go to article

High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu Jan 2015

High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu

Legacy Theses & Dissertations (2009 - 2024)

Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.

Go to article