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Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews

Wayne State University Dissertations

The rapid growth of modern electronics industry over the past half-century has been sustained by the continued miniaturization of silicon-based electronics. However, as fundamental limits approach, there is a need to search for viable alternative materials for next-generation electronics in the post-silicon era. Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have attracted much attention due to their atomic thickness, absence of dangling bonds and moderately high carrier mobility. However, achieving low-resistance contacts has been major impediment in developing high-performance field-effect transistors (FETs) based on 2D semiconductors. A substantial Schottky barrier (SB) is often present at the metal/2D-semicondcutor interface, …