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Copper Electrodeposition In Mesoscale Through-Silicon-Vias, Lyle Alexander Menk

Nanoscience and Microsystems ETDs

Copper (Cu) electrodeposition (ECD) in through-silicon-vias (TSVs) is an essential technique required for high-density 3-D integration of complex semiconductor devices. The importance of Cu ECD in damascene interconnects has led to a natural development towards copper electrodeposition in TSVs. Cu ECD is preferred over alternative approaches like the chemical vapor deposition (CVD) of tungsten (W) or aluminum (Al) because Cu ECD films have lower film stress, lower processing temperatures, and more optimal thermal and electrical properties as compared with CVD W or Al.

Via filling with electroplated Cu on substrates that have undergone atomic layer deposition of a conformal platinum …