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Incorporation Of High-K Hfo2 Thin Films In A-Igzo Thin Film Transistor Devices, Aaron Hamilton Bales

Masters Theses

In this study, HfO2 [hafnium oxide] thin films are investigated extensively as part of indium gallium zinc oxide (IGZO) thin film transistor (TFT) devices. They are incorporated into the TFTs, both as a gate insulator and a passivation layer. First, the HfO2 [hafnium oxide] films themselves are investigated through an annealing study and through I-V and C-V measurements. Then, HfO2 [hafnium oxide] is suggested as a replacement for commonly used SiO2 [silicon dioxide] gate insulator, as it has a dielectric constant that is 4 – 6 times higher. This higher dielectric constant allows for comparable TFT performance at a lower …