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- Gallium nitride (2)
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Articles 1 - 7 of 7
Full-Text Articles in Nanoscience and Nanotechnology
Initiated Chemical Vapor Deposition (Icvd) Polymer Thin Films : Structure-Property Effects On Thermal Degradation And Adhesion, Vijay Jain Bharamaiah Jeevendrakumar
Initiated Chemical Vapor Deposition (Icvd) Polymer Thin Films : Structure-Property Effects On Thermal Degradation And Adhesion, Vijay Jain Bharamaiah Jeevendrakumar
Legacy Theses & Dissertations (2009 - 2024)
Opportunities and challenges for chemical vapor deposition (CVD) of polymer thin films stems from their applications in electronics, sensors, and adhesives with demands for control over film composition, conformity and stability. Initiated chemical vapor deposition (iCVD) is a subset of the CVD technique that conjoins bulk free-radical polymerization chemistry with gas-phase processing. The novelty of iCVD technique stems from the use of an initiator that can be activated at low energies (150 – 300 °C) to react with surface adsorbed monomer to form a polymer film. This reduces risk for potential unwarranted side-reactions.
Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer
Legacy Theses & Dissertations (2009 - 2024)
Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …
Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel
Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel
Legacy Theses & Dissertations (2009 - 2024)
Electron beams are useful in many applications because they can be focused down to a spot far exceeding the physical limit of focusing visible light or x-rays. Additionally, electron beams are useful in transferring concentrated amounts of energy to a very small well defined region of a target for a fixed duration. This has led to the development of both scanning electron microscopes (SEMs) and electron beam lithography. The goal of this work was to develop a general method that accurately and easily yields the best estimate of the electron current density distribution of a focused electron beam, known as …
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …
The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien
The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien
Legacy Theses & Dissertations (2009 - 2024)
Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines.
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
Legacy Theses & Dissertations (2009 - 2024)
Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.