Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Towards Highly Sensitive Capacitance Measurements Of A Quantum Anomalous Hall Phase In Van Der Waal Heterostructures, Kayla Cerminara
Towards Highly Sensitive Capacitance Measurements Of A Quantum Anomalous Hall Phase In Van Der Waal Heterostructures, Kayla Cerminara
UNLV Theses, Dissertations, Professional Papers, and Capstones
One of the pioneering achievements in condensed matter physics of the 20th century is the observation of the quantum Hall e↵ect (QHE) in which the Hall resistance in a two-dimensional (2D) sample takes on quantized values in the presence of a strong perpendicular magnetic field. The precise quantization of the hall resistance to one part in a billion has provided a practical, worldwide resistance standard. A long-standing goal has been to realize a similar state of matter but without the need of a strong quantizing magnetic field. The quantum anomalous Hall e↵ect (QAHE) is such a state that is predicted …
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Theses and Dissertations
To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Theses and Dissertations
Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Understanding Electronic Structure And Transport Properties In Nanoscale Junctions, Kamal B. Dhungana
Understanding Electronic Structure And Transport Properties In Nanoscale Junctions, Kamal B. Dhungana
Dissertations, Master's Theses and Master's Reports - Open
Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder …