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Full-Text Articles in Nanoscience and Nanotechnology
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Graduate Theses and Dissertations
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …
Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz
Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz
Dissertations
Colloidal quantum dot (CQD) photodetectors are a rapidly emerging technology with a potential to significantly impact today’s infrared sensing and imaging technologies. To date, CQD photodetector research is primarily focused on lead-chalcogenide semiconductor CQDs which have spectral response fundamentally limited by the bulk bandgap of the constituent material, confining their applications to near-infrared (NIR, 0.7-1.0 um) and short-wavelength infrared (SWIR, 1-2.5 um) spectral regions. The overall goal of this dissertation is to investigate a new generation of CQD materials and devices that advances the current CQD photodetector research toward the technologically important thermal infrared region of 3-5 ?m, known as …
Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan
Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan
Graduate Theses and Dissertations
Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Graduate Theses and Dissertations
Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …