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Full-Text Articles in Nanoscience and Nanotechnology
Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant
Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant
Graduate Theses and Dissertations
Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …
Synthesis, Device Fabrication, And Characterization Of Two-Dimensional Molybdenum Disulfide, Gustavo Alberto Lara Saenz
Synthesis, Device Fabrication, And Characterization Of Two-Dimensional Molybdenum Disulfide, Gustavo Alberto Lara Saenz
Open Access Theses & Dissertations
The miniaturization of electronic devices according to Moore's Law has been propelled by the continuous demand for faster and smaller devices which continue to advance technology. One recent contribution to this trend was the isolation and characterization of one atom thick of graphite, known as graphene, which led to the Nobel Prize in physics in 2010 being awarded to Andre Geim and Konstantin Novoselov. Graphene and its related nanocarbon derivatives have exceptional mechanical, thermal, optical and electronic properties, making them a potential candidate for electronics and optoelectronics applications. However, this material has no intrinsic bandgap and complicated processes are required …