Nanoscience and Nanotechnology Commons^™

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz

Dissertations

Colloidal quantum dot (CQD) photodetectors are a rapidly emerging technology with a potential to significantly impact today’s infrared sensing and imaging technologies. To date, CQD photodetector research is primarily focused on lead-chalcogenide semiconductor CQDs which have spectral response fundamentally limited by the bulk bandgap of the constituent material, confining their applications to near-infrared (NIR, 0.7-1.0 um) and short-wavelength infrared (SWIR, 1-2.5 um) spectral regions. The overall goal of this dissertation is to investigate a new generation of CQD materials and devices that advances the current CQD photodetector research toward the technologically important thermal infrared region of 3-5 ?m, known as …

Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui

Dissertations

Applications of III-nitride nanowires are intensively explored in different emerging technologies including light-emitting diodes (LEDs), laser diodes, photodiodes, biosensors, and solar cells. The synthesis of the III-nitride nanowires by molecular beam epitaxy (MBE) is investigated with significant achievements. III-nitride nanowires can be grown on dissimilar substrates i.e., silicon with nearly dislocation free due to the effective strain relaxation. III-nitride nanowires, therefore, are perfectly suited for high performance light emitters for cost-effective fabrication of the advanced photonic-electronic integrated platforms. This dissertation addresses the design, fabrication, and characterization of III-nitride nanowire full-color micro-LED (µLED) on silicon substrates for µLED display technologies, high-efficient …

Controlled Reduction Of Graphene Oxide And Graphene Oxide-Carbon Nanotube Hybrids And Their Applications, Samar Azizighannad

Dissertations

Graphene and graphene derivatives are widely used in diverse research and industrial applications. Graphene production on a large scale is carried out by exfoliating graphite oxide and producing graphene oxide (GO), which comprises of graphene sheets with different oxygen-containing functional groups such as hydroxyl, carboxyl, and carbonyl. GO is reduced to reduced graphene oxide (rGO), which has properties that are closer to graphene. Properties of GO and rGO depend upon the oxygen content, and the effect of reducing oxygen content on the aqueous behavior of rGOs is not well understood.

In an effort to understand how properties of rGO change …

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …