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- Elemental semiconductors (4)
- Silicon (4)
- Adhesion (3)
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- Encapsulation (2)
- Graphene (2)
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Articles 1 - 10 of 10
Full-Text Articles in Nanoscience and Nanotechnology
Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen
Albert B Chen
Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.
Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan
Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan
Kai-tak Wan
We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Mehmet R. Dokmeci
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …
Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan
Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan
Mehmet R. Dokmeci
We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Mehmet R. Dokmeci
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.
Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed A. Busnaina, Jin-Goo Park
Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed A. Busnaina, Jin-Goo Park
Ahmed A. Busnaina
Scratch formation on patterned oxide wafers during the chemical mechanical planarization process was investigated. Silica and ceria slurries were used for polishing the experiments to observe the effect of abrasives on the scratch formation. Interlevel dielectric patterned wafers were used to study the scratch dimensions, and shallow trench isolation patterned wafers were used to study the effect of polishing parameters, such as pressure and rotational speed (head/platen). Similar shapes of scratches (chatter type) were observed with both types of slurries. The length of the scratch formed might be related to the period of contact between the wafer and the pad. …
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Ahmed A. Busnaina
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …
Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina
Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina
Ahmed A. Busnaina
In this study, the interfacial and electrokinetic phenomena of mixtures of isopropyl alcohol (IPA) and deionized (DI) water in relation to semiconductor wafer drying is investigated. The dielectric constant of an IPA solution linearly decreased from 78 to 18 with the addition of IPA to DI water. The viscosity of IPA solutions increased as the volume percentage of IPA in DI water increased. The zeta potentials of silica particles and silicon wafers were also measured in IPA solutions. The zeta potential approached neutral values as the volume ratio of IPA in DI water increased. A surface tension decrease from 72 …
Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park
Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park
Ahmed A. Busnaina
Particle removal from patterned wafers and trenches presents a tremendous challenge in semiconductor manufacturing. In this paper, the removal of 0.3 and 0.8 µm polystyrene latex (PSL) particles from high-aspect-ratio 500 µm deep trenches is investigated. An experimental, analytical, and computational study of the removal of submicrometer particles at different depths inside the trench is presented. Red fluorescent polystyrene latex (PSL) particles were used to verify particle removal. The particles are counted using scanning fluorescent microscopy. A single-wafer megasonic tank is used for the particle removal. The results show that once a particle is removed from the walls or the …
Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park
Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park
Ahmed A. Busnaina
Theremoval of nanoparticles is becoming increasingly challenging as the minimumlinewidth continues to decrease in semiconductor manufacturing. In this paper,the removal of nanoparticles from flat substrates using acoustic streamingis investigated. Bare silicon wafers and masks with a 4 nmsilicon cap layer are cleaned. The silicon-cap films are usedin extreme ultraviolet masks to protect Mo–Si reflective multilayers. Theremoval of 63 nm polystyrene latex (PSL) particles from these substratesis conducted using single-wafer megasonic cleaning. The results show higherthan 99% removal of PSL nanoparticles. The results also showthat dilute SC1 provides faster removal of particles, which isalso verified by the analytical analysis. Particle removal …