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Full-Text Articles in Nanoscience and Nanotechnology
Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, R. M. Gelfand, H. Mohseni, Hugh Hillhouse, R. Agrawal, M. A. Ratner, T. J. Marks, Mark S. Lundstrom, Muhammad A. Alam
Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, R. M. Gelfand, H. Mohseni, Hugh Hillhouse, R. Agrawal, M. A. Ratner, T. J. Marks, Mark S. Lundstrom, Muhammad A. Alam
Sourabh Dongaonkar
We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In, Ga)Se-2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V < similar to 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I-sh), across all three solar cell types considered, is characterized by the following …