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Full-Text Articles in Nanoscience and Nanotechnology
Improved Carrier Injection In Ultrathin-Body Soi Schottky-Barrier Mosfets, M Zhang, Joachim Knoch, Joerg Appenzeller, S Mantl
Improved Carrier Injection In Ultrathin-Body Soi Schottky-Barrier Mosfets, M Zhang, Joachim Knoch, Joerg Appenzeller, S Mantl
Other Nanotechnology Publications
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the Sills. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained.